Method and system for detecting defects

ABSTRACT

System for scanning a surface, including a light source producing an illuminating light beam; an objective lens assembly, located between the light source and the surface; at least one light detector; an apodizator located between the light source and the objective lens assembly; and a relay lens assembly located between the apodizator and the objective lens assembly, wherein the light source produces an image of the illuminating light beam on the apodizator, the apodizator blocks at least a portion of the illuminating light beam, the relay lens assembly images the blocked illuminating light beam at an entrance pupil of the objective lens assembly, and wherein at least one of said at least one light detector, detects light reflected from said surface.

RELATED APPLICATION

The present application is a Divisional of U.S. patent application Ser.No. 10/105,530, filed Mar. 21, 2002 now U.S. Pat. No. 6,882,417,entitled, “Method and System For Detecting Defects”. This patentapplication is hereby incorporated by reference in its entirety.

FIELD OF THE DISCLOSED TECHNIQUE

The disclosed technique relates to systems and methods for detectingdefects and anomalies in surfaces, in general and to systems and methodsfor detecting defects and anomalies in silicon wafer used in theproduction of semiconductor devices, in particular.

BACKGROUND OF THE DISCLOSED TECHNIQUE

A silicon wafer is etched by using different photographic masks toproduce large-scale integrated (LSI) semiconductor circuits,very-large-scale integrated (VLSI) semiconductor circuits or ultra-largescale integrated (ULSI) semiconductor circuits. In general, aphotographic mask is imprinted with a predetermined pattern. The patternis then imprinted on the wafer by various lithographic methods. It shallbe appreciated by those skilled in the art that the pattern imprinted onthe wafer should be essentially identical to the predetermined pattern.Any deviation from the predetermined pattern would constitute a defectand shall render that wafer defective. Also, any imperfection on thenon-etched surface of the silicon wafer (such as pits, scratches,foreign matter particles etc.) may also constitute an undesirabledefect.

Hence, it is important to detect such defects. When a defect isdetected, either at least a portion of the wafer is discarded or thedefect is analyzed to determine if it constitutes a critical defect or anuisance defect (a defect which will not adversely affect performance).Therefore it is important that the inspection system does not declare“false defects” (i.e., declare a defect for a non-defective wafer).

Semiconductor circuits are becoming more and more complex, condensed instructure and smaller in size, and are thus more prone to defects. Aconventional method for detecting defects often includes severaldifferent test procedures.

Conventional optical inspection system, utilize bright-field, dark-fieldand gray-field detection based techniques. Bright-field, dark-field andgray-field based techniques, are generally defined as imaging techniqueswherein the detected image is completely bright, completely dark, orpartially bright, respectively, in the absence of a specimen.

In a simple bright-field based technique, an illumination systemilluminates a specimen from above, and a collection optical systemlocated above or below the specimen, detects the light reflected orscattered from the specimen. The broadest definition of bright-fieldlight refers to light thus collected. It is noted, however, that othertechniques use different definitions of a bright-field light beam, asshall be described herein below.

In a typical dark-field based technique, either the specimen isilluminated from above and light reflected there from is collected fromthe sides, or the specimen is illuminated from the side and lightreflected there from is collected from above. The light thus collectedis typically referred to as the dark-field light beam. A typicalgray-field based technique shall be discussed herein below withreference to FIG. 1.

U.S. Pat. No. 6,178,257 entitled “Substrate Inspection Method andApparatus”, U.S. Pat. No. 5,699,447 entitled “Two-Phase OpticalInspection Method and Apparatus for Defect Detection”, and U.S. Pat. No.5,982,921 entitled “Optical inspection method and apparatus”, all issuedto Alumot et al. and assigned to the assignee of the present disclosedtechnique, describe a dark-field detection system, and are incorporatedherein by reference. U.S. Pat. No. 6,122,046 issued to Almogy et al.,entitled “Dual Resolution Combined Laser Spot Scanning and Area ImagingInspection”, and assigned to the assignee of the present disclosedtechnique, describes a detection system utilizing a technique combiningdark-field and bright-field imaging, and is also incorporated herein byreference.

U.S. Pat. No. 6,259,093 issued to Wakiyama et al., entitled “SurfaceAnalyzing Apparatus”, is directed to an apparatus for the detection offoreign matter and defects on a wafer surface. A polarized laser lightis scattered from the wafer surface and is detected in an opticalmicroscope. Since the pattern imprinted on the wafer causes a constantpolarization in the reflected light, an appropriate polarizing mask onthe microscope side, reduces the intensity of the reflected light.However, the light reflected from surface defects and foreign matter issignificantly less influenced by the mask and hence does not exhibit areduction in brightness, and is therefore detectable (i.e.,distinguished from the polarized light).

U.S. Pat. No. 5,699,447 issued to Alumot et al., entitled “Two-phaseoptical inspection method and apparatus for defect detection”, isdirected to a method for detecting defects on patterned wafers. Thewafer is illuminated and light diffracted from the wafer surface iscollected by a plurality of detectors, arranged in a circular patternaround the inspected wafer.

U.S. Pat. No. 6,064,517 issued to Chuang et al., entitled “High NASystem for Multiple Mode Imaging”, is directed to an inspectionapparatus which provides different imaging modes, such as dark-field andbright-field. The apparatus includes a high numerical aperturecatadioptric (using both reflection and refraction to form an image)optical group which forms an intermediate image, the image is thencorrected for aberrations by a focusing group and mapped to a planelocated at a pupil of the system. Apertures placed at this plane can beused to limit the range of scattering angles reaching the imagedetector.

U.S. Pat. No. 6,122,046 issued to Almogy et al., entitled “DualResolution Combined Laser Spot Scanning and Area Imaging Inspection”, isdirected to an apparatus for optically detecting defects in a siliconsubstrate. A linearly polarized light beam is passed through a beamsplitter, which is aligned so as to transmit the illuminating light beamwithout deflection. The illuminating light beam then passes through aquarter wave plate which circularly polarizes it. The illuminating lightbeam is then reflected from the inspected surface. The reflected lightpasses through the quarter wave plate in the opposite direction and islinearly polarized thereby, but in a direction perpendicular to theoriginal linear polarization direction of the illuminating light beam.The reflected light beam is deflected by the beam splitter, due to itsperpendicular polarization, toward a bright-field detector.

The article “Detection of Fibers by Light Diffraction”, J. List et al.(1998), describes an apparatus for the detection of asbestos fibers inair flow. The device described detects light scattered from the fibersin the air. A pulsed Nd:YAG laser produces a high intensity illuminatinglight beam. An apertured mirror is located at the opposite side of thelaser source, admitting the illuminating light beam toward a light trapand deflecting light, scattered by the asbestos fibers in the air,toward a light detector (CCD). The apertured mirror protects the lightdetector from the high intensity illuminating light beam.

Reference is now made to FIG. 1, which is a schematic illustration of asystem, generally referenced 10, for scanning a wafer surface, which isknown in the art. System 10 is used for scanning a wafer surface 12.System 10 includes a laser light source 14, a scanner 16, a polarizingbeam splitter 20, a quarter wave plate 24, an objective lens assembly26, a relay lens assembly 32, an annular mirror 34, a bright-fielddetector 36 and a gray-field detector 38.

Laser light source 14, scanner 16, polarizing beam splitter 20, quarterwave plate 24 and objective lens assembly 26 are positioned along afirst optical axis 60. Polarizing beam splitter 20, relay lens assembly32, annular mirror 34 and bright-field detector 36 are positioned alonga second optical axis 62. Annular mirror 34 and gray-field detector 38are positioned along a third optical axis 64.

Polarizing beam splitter 20 includes a semi-transparent reflection plane22. Reflection plane 22 is oriented at 45 degrees relative to wafersurface 12. Annular mirror 34 is oriented at 45 degrees relative tooptical axes 62 and 64. For purposes of simplicity, objective lensassembly 26 is depicted in 2A as a basic objective lens assembly,including an aperture stop 28, located at a pupil of the scanningsystem, and an objective lens 18. Objective lens 18 has a focal lengthF.sub.1. Aperture stop 28 has a diameter D.sub.P.

Laser light source 14 emits a laser light beam 40, which is thenreceived by scanner 16. Scanner 16 expands and redirects laser lightbeam 40, thereby emitting alternating illuminating light beams atdynamically changing angles and a constant diameter D. The exampleillustrated in FIG. 1 shows only an illuminating light beam 44, having amaximal scanning angle .theta., relative to optical axis 60. Otherilluminating light beams (not shown) have scanning angles between theta.and -.theta.

Illuminating light beam 44 passes through polarizing beam splitter 20and from there, further through quarter wave plate 24. Quarter waveplate 24 circularly polarizes illuminating light beam 44 in a firstangular direction. Illuminating light beam 44 enters objective lensassembly 26 and passes through aperture stop 28. Objective lens assembly26 focuses illuminating light beam 44 onto a point 30.sub.1 on wafersurface 12.

Illuminating light beam 44 is reflected and scattered from point30.sub.1, in a plurality of directions. Some of the reflected andscattered light is collected by the objective lens assembly, and used todetect the properties of wafer surface 12. According to this technique,the collected light includes a bright-field light beam portion and agray-field light beam portion. The bright-field light beam is defined aslight the portion of collected light which follows the exact path of theilluminating light beam. The gray-field light beam is defined as therest of the collected light, which is not included in the bright-fieldlight beam. A bright-field light beam 50 and a gray-field light beam 52,of the light scattered and reflected from point 30.sub.1, are collectedby objective lens 18. Objective lens 18 collimates bright-field lightbeam 50 and gray-field light beam 52, and directs the light beamsthrough aperture stop 28.

Light beams 50 and 52 exit from objective lens assembly 26 circularlypolarized in the opposite angular direction as illuminating light beam44. Light beams 50 and 52 pass through quarter wave plate 24, and becomelinearly polarized, perpendicular to the polarization of illuminatinglight beam 44. Light beams 50 and 52 are then reflected offsemi-transparent reflection plane 22, and directed to relay lensassembly 32.

Relay lens assembly 32 produces an inverted image of the pupil ofaperture stop 28, at the pupil of annular mirror 34. Bright-field lightbeam 50 passes through the aperture of annular mirror 34. Bright-fielddetector 36 receives bright-field light beam 50 and detects theintensity thereof. Gray-field light beam 52 is reflected off annularmirror 34. Gray-field detector 38 receives gray-field light beam 52 anddetects the intensity thereof.

It is noted that the light beams emitted at other times and having otherscanning angles, reach other points on wafer surface 12, between point30.sub.1 and another point 30.sub.2, which is located on the oppositeside of optical axis 60 from point 30.sub.1.

System 10 further includes additional objective lens assemblies (notshown), which are interchangeable with objective lens assembly 26. Theseobjective lens assemblies are mounted on a turret, a slide (both notshown), and the like, which enables interchanging objectives. Each ofthe different objective lens assemblies is used for a different mode ofoperation.

Reference is further made to FIGS. 2A and 2B. FIG. 2A is a schematicillustration of objective lens assembly 26 and scanned wafer surface 12of system 10 (FIG. 1). FIG. 2B is a schematic illustration of anadditional objective lens assembly 102 which replaces objective lensassembly 26 (FIG. 2A), and scanned wafer surface 12.

With reference to FIG. 2B, objective lens assembly 102 replacesobjective lens assembly 26 (FIG. 2A). It is noted that the opticalelements of objective lens assembly 102 are not shown. Objective lensassembly 102 has a focal length F.sub.2 equal to 1 1 2 F 1 whereinF.sub.1 is the focal length of objective lens assembly 26 (FIG. 2A).

Objective lens assembly 102 receives an illuminating light beam110.sub.1 of diameter D, and focuses it onto a point 120.sub.1 on wafersurface 12. Illuminating light beam 110.sub.1 is similar to illuminatinglight beam 44 (FIG. 2A), having a maximal scanning angle theta.

Objective lens assembly 102 collects a bright-field light beam 110.sub.1having diameter D and a gray-field light-beam 112.sub.1 having diameterD.sub.P. It is noted that objective lens assembly 102 may includevarious optical elements (e.g., lenses, stops, and the like), which arenot shown.

The line between points 30.sub.1 and 30.sub.2 (FIG. 2A) on wafer surface12, is known as the scan line of system 10. It is well known that thescan line length is proportional to the focal length of the objectivelens assembly. Hence, the scan line length for the system of FIG. 2B, isapproximately ½ of the scan line length of system of FIG. 2A.Furthermore, it is well known that the scanning speed of a scanningsystem such as system 10 (FIG. 1), is proportional to the square of thescan line length.

It is also well known that the numerical aperture of the scanning lightbeams of system 10 is inversely proportional to the focal length of theobjective lens assembly used. Hence, the numerical aperture for systemof FIG. 2B, is approximately 2 times the numerical aperture for systemof FIG. 2A. Furthermore, is well known that the scanning resolution fora scanning system such as system 10 is proportional to the numericalaperture.

Thus, by selecting different objectives with different focal lengths,the user of system 10 can choose between a low-speed, high-resolutionand a high-speed, low-resolution scan. It is noted that to increase thegray-field numerical aperture, it is required to increase both thenumerical aperture of the objective lens assembly and the size of thepolarizing beam splitter. The cost of an objective lens assembly and thecost of a polarizing beam splitter, are highly correlated with theirrespective sizes. Hence, increasing the gray-field numerical aperturefor system 10 involves a significant cost increase. It is still furthernoted that the objective lens assembly is the element of system 10 whichis closest to the wafer, located directly there above. Hence, replacingobjectives when changing magnification modes, involves a risk ofcontaminating the inspected wafer.

SUMMARY OF THE DISCLOSED TECHNIQUE

It is an object of the disclosed technique to provide a novel method andsystem for detecting defects in printed surfaces in general and fordetecting defects and anomalies in silicon wafer used in the productionof semiconductor devices, which overcomes the disadvantages of the priorart.

In accordance with the disclosed technique, there is thus provided asystem for scanning a surface including a light source producing anilluminating light beam, an objective lens assembly, located between thelight source and the surface, at least one light detector, an apodizatorlocated between the light source and the objective lens assembly, and arelay lens assembly located between the apodizator and the objectivelens assembly. The light source produces an image of the illuminatinglight beam on the apodizator. The apodizator blocks at least a portionof the illuminating light beam. The relay lens assembly images theblocked illuminating light beam at an entrance pupil of the objectivelens assembly. Reflected light collected by the objective lens assemblyis directed to at least one of the light detectors, by means of a beamsplitter or an annular mirror, or both.

In accordance with another embodiment of the disclosed technique, thereis provided a multi-zone gray-field detector, which includes agray-field collector, a plurality of light detectors and a plurality oflight guides. The gray-field collector is divided into a plurality ofsections, each defining a detection zone. Each of the light guidesoptically couples one of the sections with one of the light detectors.Each of the light detector detects at least a portion of light directedthereto, by a respective one of the light guides.

BRIEF DESCRIPTION OF THE DRAWINGS

The disclosed technique will be understood and appreciated more fullyfrom the following detailed description taken in conjunction with thedrawings in which:

FIG. 1 is a schematic illustration of a system for scanning a wafersurface, which is known in the art;

FIG. 2A is a schematic illustration of the objective lens assembly ofthe system of FIG. 1 and the scanned wafer surface;

FIG. 2B is a schematic illustration of an additional objective lensassembly which replaces the objective lens assembly of FIG. 2A, and thescanned wafer surface;

FIG. 3A is a schematic illustration of a system for scanning a wafersurface, constructed and operative in accordance with an embodiment ofthe disclosed technique, at a first moment in time;

FIG. 3B is a schematic illustration of the system of FIG. 3A, at anothermoment in time;

FIG. 3C is a schematic illustration of the system of FIGS. 3A and 3B,including the light beams of both FIGS. 3A and 3B;

FIG. 4A is an illustration in detail of the aperture stop, telescope andobjective lens assembly, of the system of FIG. 3A, at a first moment intime;

FIG. 4B is an illustration of the elements presented in FIG. 4A, at asecond moment in time;

FIG. 4C is an illustration of the elements presented in FIGS. 4A and 4B,including the light beams of both FIGS. 4A and 4B;

FIG. 4D is an illustration in detail of the aperture stop and objectivelens assembly of system 200, another telescope replacing the telescopeof FIG. 4A and used in another mode of operation of the system of FIG.3A, and scanned wafer surface;

FIG. 4E is an illustration in detail of the aperture stop and objectivelens assembly of the system of FIG. 3A, a further telescope, replacingthe telescope of FIG. 4 a and used in a further mode of operation of thesystem of FIG. 3 a, and scanned wafer surface;

FIG. 5 is a schematic illustration of a scanning system constructed andoperative in accordance with another embodiment of the disclosedtechnique;

FIG. 6 is a schematic illustration of a scanning system usingapodizators, constructed and operative in accordance with a furtherembodiment of the disclosed technique;

FIG. 7A is a schematic illustration of an apodizator constructed andoperative in accordance with an embodiment of the disclosed technique;

FIG. 7B is a schematic illustration of the objective lens assembly andthe scanned wafer surface of FIG. 6, and an illuminating light beamwhich has already passed through the apodizator of FIG. 7A;

FIG. 7C is a schematic illustration of a bright-field light beam and agray-field light beam, which are reflections and refractions ofilluminating light beam of FIG. 7B, by the wafer surface, traveling fromthe scanned wafer surface and passing through the objective lensassembly of the system of FIG. 6;

FIG. 8A is a schematic illustration of another apodizator, constructedand operative in accordance with another preferred embodiment of thedisclosed technique;

FIG. 8B is a schematic illustration of the objective lens assembly andthe scanned wafer surface of FIG. 6, and an illuminating light beamwhich has already passed through the apodizator of FIG. 8A;

FIG. 8C is a schematic illustration of a bright-field light beam and agray-field light beam, which are reflections and refractions ofilluminating of the illuminating light beam of FIG. 8B, by the wafersurface, traveling from the scanned wafer surface and passing throughthe objective lens assembly of the system of FIG. 6;

FIG. 9A is a schematic illustration of another apodizator, constructedand operative in accordance with a further embodiment of the disclosedtechnique;

FIG. 9B is a schematic illustration of the objective lens assembly andthe scanned wafer surface of FIG. 6, and an illuminating light beamwhich has already passed through the apodizator of FIG. 9A;

FIG. 9C is a schematic illustration of a bright-field light beam and agray-field light beam, which are reflections and refractions of theilluminating light beam of FIG. 9B, by the wafer surface, traveling fromthe scanned wafer surface and passing through the objective lensassembly of the system of FIG. 6;

FIG. 10A is a schematic illustration of another apodizator, constructedand operative in accordance with another embodiment of the disclosedtechnique;

FIG. 10B is a schematic illustration of the objective lens assembly andthe scanned wafer surface of FIG. 6, and an illuminating light beamwhich has already passed through the apodizator of FIG. 10A;

FIG. 10C is a schematic illustration of a bright-field light beam and agray-field light beam, which are reflections and refractions of theilluminating light beam of FIG. 10B, by the wafer surface, travelingfrom the scanned wafer surface and passing through the objective lensassembly of the system of FIG. 6;

FIG. 11A is a schematic illustration of another apodizator constructedand operative in accordance with a further embodiment of the disclosedtechnique;

FIG. 11B is a schematic illustration of the objective lens assembly andthe scanned wafer surface of FIG. 6, and an illuminating light beamwhich has already passed through the apodizator of FIG. 11A;

FIG. 11C is a schematic illustration of a bright-field light beam and agray-field light beam, which are reflections and refractions of theilluminating light beam of FIG. 11B, by the wafer surface, travelingfrom the scanned wafer surface and passing through the objective lensassembly of the system of FIG. 6;

FIG. 12 is a schematic illustration of a dynamic apodizator, and acontroller, constructed and operative in accordance with anotherembodiment of the disclosed technique;

FIG. 13A is a schematic illustration of a bright-field filter;

FIG. 13B is a schematic illustration of the bright-field filter of FIG.13A and a bright-field light beam incident there upon and partiallytransmitted there through;

FIG. 13C is a schematic illustration of the objective lens assembly ofthe system of FIG. 6, the scanned wafer surface, the illuminating lightbeam of FIG. 9A, and the bright-field light beam of FIG. 13B and a grayfield light beam, which are reflections and refractions of theilluminating light beam from the wafer surface of FIG. 6;

FIG. 14 is a schematic illustration of a system for scanning a wafersurface, according to another embodiment of the disclosed technique;

FIG. 15 is a schematic illustration of a system for scanning a wafersurface, according to a further embodiment of the disclosed technique;

FIG. 16 is a schematic illustration of a front end optical assembly forscanning a wafer surface, according to another embodiment of thedisclosed technique;

FIG. 17 is a schematic illustration of a method for operating either ofthe systems of FIGS. 14 and 15 or the front end assembly of FIG. 16,operative in accordance with another embodiment of the disclosedtechnique;

FIG. 18 is a schematic illustration of a multi-zone gray-field detectorconstructed and operative in accordance with a further embodiment of thedisclosed technique;

FIG. 19 is a schematic illustration of a system for scanning a wafersurface, constructed and operative in accordance with another embodimentof the disclosed technique; and

FIG. 20 is a schematic illustration of a method for inspecting asurface, in accordance with another embodiment of the disclosedtechnique.

DETAILED DESCRIPTION OF EMBODIMENTS

The disclosed technique overcomes the disadvantages of the prior art byproviding a novel method and system for detecting defects insemiconductor manufacturing procedures, using interchangeable telescopesand a single objective.

In the following description the following terms are used:

Illuminating light beam—a light beam originating from a light source andilluminating an inspected object.

Illumination path—the path of the illuminating light beam.

Normally collected light beam—a light beam reflected or scattered off aninspected object and reaching an objective lens above the inspectedobject.

Collection path—the path of the collected light beam.

Combined path—the intersection of the illumination and collection paths.

Bright-field light beam—the portion of the normally collected light beamcoinciding with the illumination path.

Gray-field light beam—the portion of the normally collected light beamnot coinciding with the illumination path.

Pupil of a scanning system—a geometric location wherein all the scanninglight beams coincide.

The disclosed technique has several aspects. According to one aspect ofthe disclosed technique, interchangeable telescopes, positioned in thecombined path, determine the modes of operation of the scanning system.According to another aspect of the disclosed technique, the combinedbright-field and gray-field light beam arrives first at an annularmirror, which separates between the bright-field and the gray-fieldlight beams. According to a further aspect of the disclosed technique,there is provided a novel optical structure for changing the shape of anilluminating light beam, without directly affecting the shape of therespective collected light beams. According to another aspect of thedisclosed technique, the apodizators are combined with bright-fieldfilters, which block a selected portion of the bright-field light beambefore the bright-field light beam reaches the bright-field detector.According to a further aspect of the disclosed technique, continuousrange magnification replaces the discrete values magnification which wasprovided by the interchangeable telescopes. It is noted that variouscombinations of the above aspects may be implemented in a singlescanning system.

According to one embodiment of the disclosed technique, the scanningsystem illustrated in FIG. 1 is replaced by an alternative scanningsystem, such as the system illustrated below in FIGS. 3A and 3B.Accordingly, the portion of the scanning system of FIG. 1, which changesaccording to the selected magnification mode, as illustrated in detailin FIGS. 2A and 2B, is replaced by the portion of the scanning system ofFIGS. 3A and 3B, which changes according to the selected magnificationmode, as illustrated in detail in FIGS. 4A, 4B and 4C.

Reference is now made to FIGS. 3A, 3B and 3C. FIG. 3A is a schematicillustration of a system, generally referenced 200, for scanning a wafersurface, constructed and operative in accordance with an embodiment ofthe disclosed technique, at a first moment in time. FIG. 3B is aschematic illustration of the system of FIG. 3A, at another moment intime. FIG. 3C is a schematic illustration of the system of FIGS. 3A and3B, including the light beams of both FIGS. 3A and 3B.

In the example set forth in FIGS. 3A, 3B and 3C system 200 is used forscanning a wafer surface 202. System 200 includes a laser light source204, a scanner 206, a polarizing beam splitter 210, a quarter wave plate214, an aperture stop 218, a telescope 216, an objective lens assembly222, a relay lens assembly 230, a bright-field detector 234 and agray-field detector 236.

Laser light source 204, scanner 206, polarizing beam splitter 210,quarter wave plate 214, aperture stop 218, telescope 216, objective lensassembly 222 and wafer surface 202 are positioned along a first opticalaxis 260. First optical axis 260 is perpendicular to wafer surface 202.Scanner 206 is positioned between laser light source 204 and polarizingbeam splitter 210. Quarter wave plate 214 is positioned betweenpolarizing beam splitter 210 and aperture stop 218. Telescope 216 ispositioned between aperture stop 216 and objective lens assembly 222.Objective lens assembly 222 is positioned between telescope 216 andwafer surface 202.

Polarizing beam splitter 210, relay lens assembly 230, annular mirror232 and bright-field detector 234 are positioned along a second opticalaxis 262. In the present example, second optical axis 262 isperpendicular to first optical axis 260. Relay lens assembly 230 ispositioned between polarizing beam splitter 210 and annular mirror 232.Annular mirror 232 is positioned between relay lens assembly 230 andbright-field detector 234.

Annular mirror 232 and gray-field detector 236 are positioned along athird optical axis 264. In the present example, third optical axis 264is parallel to first optical axis 260.

Polarizing beam splitter 210 includes a semi-transparent reflectionplane 212. Semi-transparent reflection plane 212 either transmits orreflects light incident thereupon, depending on the state ofpolarization of the incident light. In the present example,semi-transparent reflection plane 212 is oriented at 45 degrees relativeto wafer surface 202. Quarter-wave plate 214 adds a .pi./2 phase (i.e.,¼ of a cycle) to one of the linearly polarized components of lightincident there upon. It is noted that quarter-wave plate 214 andpolarizing beam splitter 210 may be incorporated in a single module.Annular mirror 232 is located at a pupil of the scanning system. Annularmirror 232 reflects light at all areas thereof (excluding the aperture).In the present example, annular mirror 232 is oriented at 45 degreesrelative to optical axes 262 and 264.

It is noted that the annular mirror, which is also known as theapertured mirror, may have various orientations and shapes. For example,the annular mirror may be elliptical, with an elliptical aperture.Accordingly, the inner and outer diameters of annular mirror 232, in thedirection perpendicular to the plane defined by optical axes 260 and262, are D.sub.IL and D.sub.TP, respectively, wherein D.sub.TP is theaperture diameter of aperture stop 218, and D.sub.IL is the diameter ofthe illuminating light beams, as explained herein below. Furthermore,the inner and outer diameters of the mirror in the direction of opticalaxis 264, may be set to at least .multidot.2.times.D.sub.IL and.multidot.2.times.D.sub.TP, respectively, but generally depend also ontheta.sub.IL, which is the scanning angle, as explained herein below.

Bright-field detector 234 and gray-field detector 236 detect propertiesof light incident there upon.

Reference is further made to FIGS. 4A, 4B and 4C. FIG. 4A is anillustration in detail of the aperture stop 218, telescope 216 andobjective lens assembly 222, of system 200, and scanned wafer surface202 (FIG. 3A), at a first moment in time. FIG. 4B is an illustration ofthe system of FIG. 4A, at a second moment in time. FIG. 4C is anillustration of the system of FIGS. 4A and 4B, including the light beamsof both FIGS. 4A and 4B.

Aperture stop 218 is located at the entrance pupil of telescope 216.Aperture stop 218 includes an aperture of diameter D.sub.TS. Aperturestop 218 transmits incident light through the aperture, and rejects(i.e., reflects or absorbs) all other incident light. For example,aperture stop may be an annular non-transmitting disk of inner diameterD.sub.TS, and a substantially larger outer diameter (e.g., twice aslarge as the inner diameter).

Telescope 216 includes a first telescope lens 266 and a second telescopelens 268. Telescope lenses 266 and 268 have equal focal lengths.Objective lens assembly 222 includes an objective aperture stop 224 andan objective lens 226. Objective aperture stop 224 is located at theexit pupil of telescope 218, which is also the entrance pupil ofobjective lens assembly 222. Objective aperture stop 224 has an aperturediameter of D.sub.OS. In the present example, D.sub.TS=D.sub.OS, whereinD.sub.TS is the diameter of aperture stop 218. Objective lens 226 has afocal length F.

For purposes of simplicity, objective lens assembly 222 and telescope216 are depicted in FIGS. 4A, 4B, and 4C as a basic objective lensassembly and a basic telescope, respectively. It is noted, however, thatsystem 200 may use a more complex objective lens assembly and a morecomplex telescope instead of objective lens assembly 222 and telescope216, respectively. Accordingly, the telescope and objective lensassembly may include additional optical elements and may have differentdimensions from objective lens assembly 222 and telescope 216,respectively.

Referring back to FIGS. 3A, 3B and 3C, system 200 performs a linear scanof wafer surface 202 by illuminating points on a line on wafer surface202, collecting the light reflected and scattered there from, anddetecting scattered and reflected light. Laser light source 204 emits alaser light beam 240 toward scanner 206. Scanner 206 receives laserlight beam 240. Scanner 206 expands and redirects laser light beam 240,thereby producing alternating illuminating light beams 244.sub.1 and244.sub.2, each produced at a different time. Illuminating light beams244.sub.1 and 244.sub.2 are collimated, and linearly polarized in afirst predetermined direction of linear polarization. It is noted thatfor the purpose of simplicity, all of the illuminating light beamsmentioned herein, have a circular cross-section, unless otherwisestated.

At a first moment in time, scanner 206 emits illuminating light beam244.sub.1, at a diameter D.sub.IL and an angle theta.sub.IL relative tofirst optical axis 260. In the present example, D.sub.IL isapproximately equal to ¼D.sub.TS. At a second moment in time, scanner206 emits illuminating light beam 244.sub.2, also at diameter D.sub.ILand angle .theta.sub.IL relative to first optical axis 260. Illuminatinglight beams 244.sub.1 and 244.sub.2 are on opposite sides of firstoptical axis 260. It is noted that the illumination angle theta.sub.IL,is generally small (i.e., .theta.sub.IL<10 degrees). Hence, small-angleapproximations apply.

Illuminating light beam 244, passes through polarizing beam splitter 210and from there, further through quarter wave plate 214. Quarter waveplate 214 circularly polarizes illuminating light beam 244.sub.1 in afirst angular direction (e.g., clockwise). Illuminating light beam244.sub.1 then passes through aperture stop 218 and enters telescope216.

With reference to FIGS. 4A, 4B and 4C, telescope 216 produces aninverted image of the pupil of aperture stop 218, at the pupil ofobjective aperture stop 224, at a magnification ratio M=1. Telescope 216emits light beam 244.sub.1 at a diameter D.sub.BF1, and an angle.theta.sub.1 relative to first optical axis 260. In general, the angularmagnification of a telescope is the reciprocal of the linearmagnification of the telescope. The angular magnification and the linearmagnification of telescope 216 are both equal to 1. Accordingly, in thepresent example, D.sub.BF1=D.sub.IL, and .theta.sub.1=.theta.sub.IL.

Illuminating light beam 244.sub.1 enters objective lens assembly 222 andpasses through objective aperture stop 224. Objective lens assembly 222focuses illuminating light beam 244.sub.1 onto a point 230.sub.1 onwafer surface 202.

Wafer surface 202, depending on the properties of the various elementsthereon (e.g., topography, reflectivity, and the like), reflects andscatters illuminating light beam 244.sub.1 from point 230.sub.1 in aplurality of directions.

A bright-field light beam 250.sub.1 and a gray-field light beam252.sub.1, of the scattered and reflected light, are received atobjective lens assembly 222. Objective lens 226 collimates light beams250.sub.1 and 252.sub.1. Objective lens 226 directs bright-field lightbeam 250.sub.1 through objective aperture stop 224 at diameterD.sub.BF1. Objective lens 226 directs gray-field light beam 252.sub.1 toobjective aperture stop 224 at an outer diameter D.sub.GF1 and innerdiameter D.sub.BF1. It is noted that the outer diameter D.sub.GF1 ofgray-field light beam 252.sub.1 may generally depend on both thediameter D.sub.OS of objective aperture stop 224 and the diameterD.sub.TS of aperture stop 218. In the present example, D.sub.GF1 isequal to D.sub.OS or, equivalently, to D.sub.TS.

Light beams 250.sub.1 and 252.sub.1 pass through objective aperture stop224 and enter telescope 216. Telescope 216 emits light beams 250.sub.1and 252.sub.1 toward aperture stop 218. Telescope 216 emits bright-fieldlight beam 250.sub.1 and gray-field light beam 252.sub.1 towardsaperture stop 218, at an outer diameter D.sub.TS or, equivalently,D.sub.OS. Light beams 250.sub.1 and 252.sub.1 pass through aperture stop218. Referring back to FIGS. 3A, 3B and 3C, light beams 250.sub.1 and252.sub.1 then reach quarter wave plate 214. At this stage, light beams250.sub.1 and 252.sub.1 are circularly polarized in the opposite angulardirection as light beam 244.sub.1 (e.g., counterclockwise). Quarter waveplate 214 linearly polarizes light beams 250.sub.1 and 252.sub.1 in adirection perpendicular to the linear polarization of illuminating lightbeam 244.sub.1. Light beams 250.sub.1 and 252.sub.1 then reachpolarizing beam splitter 210. Semi-transparent reflection plane 212reflects light beams 250.sub.1 and 252.sub.1 toward relay lens assembly230.

Relay lens assembly 230, together with polarizing beam splitter 210,produces an inverted image of telescope entrance pupil 218 at the pupilof annular mirror 232. Bright-field light beam 250.sub.1 passes throughthe aperture of annular mirror 232 toward bright-field detector 234.Bright-field detector 234 receives bright-field light beam 250.sub.1 anddetects properties thereof. Annular mirror 232 reflects gray-field lightbeam 252.sub.1 toward gray-field detector 236. Gray-field detector 236receives gray-field light beam 252.sub.1 and detects properties thereof.

With reference to FIG. 4B, Illuminating light beam 244.sub.2 travels apath similar to illuminating light beam 244.sub.1, but on the oppositeside of optical axis 260. Objective lens 226 focuses illuminating lightbeam 244.sub.2 onto a point 230.sub.2 on wafer surface 202, located onthe opposite side of optical axis 260 from 230.sub.1, thereby producinga bright-field light beam 250.sub.2 and a gray-field light beam252.sub.2. Bright-field light beam 250.sub.2 and gray-field light beam252.sub.2, complete a similar path as bright-field light beam 250.sub.1and gray-field light beam 252.sub.1, respectively, but on the oppositesides of optical axes 260, 262 and 264.

Scanner 206 may also emit intermediate illuminating light beams (notshown) at intermediate moments in time (i.e., between the emission ofilluminating light beams 244.sub.1 and 244.sub.2). The intermediateilluminating light beams complete a similar path as illuminating lightbeams 244.sub.1 and 244.sub.2, but at intermediate angles relative tofirst optical axis 260. Thus, intermediate illuminating light beamsreach intermediate points (not shown) on wafer surface 202 betweenpoints 230.sub.1 and 230.sub.2. Intermediate bright-field and gray-fieldlight beams (not shown) are detected at bright-field detector 234 andgray-field detector 236, respectively, at intermediate moments in time.

Thus, system 200 (FIG. 3) scans the line between points 230.sub.1 and230.sub.2 also known as the scan line, on wafer surface 202. The scanline length L.sub.1 is approximately equal to2.times.F.times.theta.sub-.1.

The numerical aperture NA.sub.BF1 of bright-field light beam 250.sub.1,also known as the bright-field numerical aperture, is equal to 2 D BF 12 F, wherein D.sub.BF1 is the diameter of bright-field light beam250.sub.1 and F is the focal length of objective lens 226. It is notedthat bright-field light beams 250.sub.1 and 250.sub.2, and intermediatebright-field light beams in system 200, all have the same diameterD.sub.BF 1, and hence all have the same numerical aperture NA.sub.BF 1.

The numerical aperture NA.sub.GF1 of gray-field light beam 252.sub.1,also known as the gray-field numerical aperture, is equal to 3 D GF 1 2F, wherein D.sub.GF1 is the outer diameter of gray-field light beam252.sub.1 and F is the focal length of objective lens 226. It is notedthat gray-field light beams 252.sub.1 and 252.sub.2, and intermediategray-field light beams in system 200, all have the same outer diameterD.sub.GF1, and hence all have the same numerical aperture NA.sub.GF1.

System 200 may further include other telescopes (not shown) in additionto telescope 216. Some of these telescopes shall be described hereinbelow in conjunction with FIGS. 4D and 4E. Each telescope has adifferent magnification. The telescopes are mounted on a turret, a slide(both not shown), and the like, which enables interchanging telescopes.Thus, system 200 can operate at different modes of operation, whereineach mode of operation is characterized by a different magnification.

Reference is now made to FIGS. 4D and 4E. FIG. 4D is an illustration indetail of the aperture stop 218 and objective lens assembly 222 ofsystem 200, a telescope 302, replacing telescope 216 and used in anothermode of operation of system 200, and scanned wafer surface 202 (FIG. 3).FIG. 4E is an illustration in detail of the aperture stop 218 andobjective lens assembly 222 of system 200, a telescope 322, replacingtelescope 216 and used in a further mode of operation of system 200, andscanned wafer surface 202.

With reference to FIG. 4D, telescope 302 includes a first telescope lens316 and a second telescope lens 318. The focal length of first telescopelens 316 is 3 times greater than the focal length of second telescopelens 318.

Telescope 302 receives an illuminating light beam 310.sub.1 at telescopeentrance pupil 304. It is noted that illuminating light beam 310.sub.1has an identical illumination path (not shown) in system 200 (FIG. 3),between scanner 206 and aperture stop 218, as illuminating light beam244.sub.1 (FIG. 3). The diameter of illuminating light beam 310.sub.1 isalso equal to D.sub.IL.

Telescope 302 produces an inverted image of the pupil of aperture stop218, at the pupil of objective aperture stop 224, at a magnificationratio M=3. Telescope 302 emits illuminating light beam 310.sub.1 at adiameter D.sub.BF2, and an angle .theta.sub.2. The linear magnificationand the angular magnification of telescope 302 are 3 and ⅓,respectively. Accordingly, D.sub.BF2=3.times.D.sub.IL, and.theta.sub.2=⅓.times.theta.sub.IL.

Objective lens assembly 222 focuses illuminating light beam 310.sub.1onto a point 308.sub.1, thereby producing a bright-field light beam312.sub.1 and a gray-field light beam 314.sub.1. Bright-field hlightbeam 312.sub.1 and gray-field light beam 314.sub.1 have diametersD.sub.BF2 and D.sub.GF2=D.sub.TS, respectively.

The diameter D.sub.BF2 of bright-field light beam 312.sub.1 is equal to3.times.D.sub.IL. Accordingly, D.sub.BF2=3.times.D.sub.BF1, and hence,the bright-field numerical aperture NA.sub.BF2 for the mode of operationof system 200, illustrated in FIG. 4D, is equal to 3.times.NA.sub.BF1.The diameter D.sub.GF2 of gray-field light beam 314.sub.1 is equal toD.sub.OS=D.sub.TS, and hence, the gray-field numerical apertureNA.sub.GF2 for this mode of operation is equal to NA.sub.GF1.

The scan line length L.sub.2 for the mode of operation of system 200,illustrated in FIG. 4B is approximately equal to2.times.F.times.theta.sub.2 or, equivalently, L.sub.2=⅓.times.L.sub.1-.

With reference to FIG. 4E, telescope 322 has a linear magnification ofM=⅓. Telescope 322 includes a first telescope lens 336 and a secondtelescope lens 338. The focal length of first telescope lens 336 is 3times less than the focal length of second telescope lens 338.

Telescope 322 receives an illuminating light beam 330.sub.1 at telescopeentrance pupil 324. Telescope 322 produces an inverted image of pupil324 at the pupil of objective aperture stop 224, at a magnificationratio M=⅓. Telescope 322 emits light beam 330.sub.1 at a diameterD.sub.BF3, and an angle .theta.sub.3. The linear magnification and theangular magnification of telescope 302 are ⅓ and 3, respectively.Accordingly, D.sub.BF3=⅓.times.D.sub.IL, and.theta.sub.3=3.times.the-ta.sub.IL.

Objective lens assembly 222 focuses illuminating light beam 330.sub.1onto a point 328.sub.1, thereby producing a bright-field light beam322.sub.1 and a gray-field light beam 334.sub.1. Bright-field light beam322.sub.1 has a diameter D.sub.BF3=⅓.times.D.sub.BF1, and hence, thebright-field numerical aperture NA.sub.BF3 for this mode of operation isequal to ⅓.times.NA.sub.BF1. Gray-field light beam 334.sub.1 has adiameter D.sub.GF3=⅓.times.D.sub.TS=⅓.times.D.sub.GF1, and hence, thegray-field numerical aperture NA.sub.BF3 for this mode of operation isequal to ⅓.times.NA.sub.GF1. It is noted that in the mode of operationof FIG. 4E, aperture stop 218 determines the diameter of gray-fieldlight beam 334.sub.1.

The scanning resolution for system 200 is highly correlated with thegray-field numerical aperture and to the bright-field numericalaperture. In addition, the scanning speed of system 200 is proportionalto the scan line length. Thus, by selecting different modes of operationusing different telescopes, the user of system 200 can choose between alow-resolution, high-speed scan, a high-resolution, low-speed scan andother modes in between.

System 200 uses a single (i.e., non interchangeable) objective lensassembly together with a plurality of interchangeable telescopes, forthe common illumination and collection path, as opposed to conventionalsystems which use a different objective lens assembly for eachmagnification.

It is noted that a combination of a single high NA objective lens and aplurality of telescopes, provides a large collection area (i.e., forcollecting a collected light beam having a large diameter), at arelatively low cost, compared with that of a plurality of objective lensassemblies which are designed to exhibit that same large collectionarea. It is further noted that using an objective lens assembly having ahigh numerical aperture, provides a larger gray-field light beam, andhence, provides more information to the gray-field detector.

It is still further noted that the use of interchangeable telescopesinstead of interchangeable objective lens assemblies, reduces the chancefor contamination of the wafer, since the telescopes are isolated fromthe wafer, whereas the objective lens assembly is the element of theoptical system closest to the wafer and further not isolated there from.

According to another aspect of the disclosed technique, there isprovided novel optical structure for separating gray-field andbright-field light beams. According to this aspect, the combined lightbeam arrives first at an annular mirror, which separates there between.The annular mirror reflects the gray-field light beam to a gray-fielddetector and lets the bright-field light beam pass there through, towarda quarter wave plate and polarizing beam splitter.

Reference is now made to FIG. 5, which is a schematic illustration of ascanning system, generally referenced 360, constructed and operative inaccordance with another embodiment of the disclosed technique.

In the example set forth in FIG. 5, system 360 is used for scanning awafer surface 400. System 360 includes a laser light source 362, ascanner 364, a polarizing beam splitter 366, a quarter wave plate 368,an annular mirror 370, a relay lens assembly 372, an objective lensassembly 374, a bright-field detector 378 and a gray-field detector 380.Objective lens assembly 374 includes an objective aperture stop 376.Polarizing beam splitter 366 includes a semi-transparent reflectionplane 402.

Laser light source 362, scanner 364, polarizing beam splitter 366,quarter wave plate 368, annular mirror 370, relay lens assembly 372,objective lens assembly 374 and wafer surface 400 are positioned along afirst optical axis 392. First optical axis 392 is perpendicular to wafersurface 400. Scanner 364 is positioned between laser 362 and polarizingbeam splitter 366. Quarter wave plate 368 is positioned betweenpolarizing beam splitter 366 and annular mirror 370. Relay lens assembly372 is positioned between annular mirror 370 and objective lens assembly374. Objective lens assembly 374 is positioned between relay lensassembly 372 and wafer surface 400.

Polarizing beam splitter 366 and bright-field detector 378 arepositioned along a second optical axis 394. In the present example,second optical axis 394 is perpendicular to first optical axis 392.

Annular mirror 370 and gray-field detector 380 are positioned along athird optical axis 396. In the present example, third optical axis 396is parallel to second optical axis 394.

Laser light source 362, scanner 364, polarizing beam splitter 366,semi-transparent reflection plane 402, quarter wave plate 368, annularmirror 370, relay lens assembly 372, objective lens assembly 374,objective entrance pupil 376, bright-field detector 378 and gray-fielddetector 380 are generally similar to laser light source 204, scanner206, polarizing beam splitter 210, semi-transparent reflection plane212, quarter wave plate 214, annular mirror 232, relay lens assembly230, objective lens assembly 222, objective aperture stop 224,bright-field detector 234 and gray-field detector 236 (FIG. 3),respectively.

Laser light source 362 emits a laser light beam 382 toward scanner 364.Scanner 364 receives laser light beam 382 and emits an illuminatinglight beam 384 toward polarizing beam splitter 366. Illuminating lightbeam 384 passes through semi-transparent plane 402 and quarter waveplate 368, and from there, further through the aperture of annularmirror 370 toward relay lens assembly 372. Relay lens assembly 372produces an inverted image of the pupil of annular mirror 370, at theentrance pupil of objective lens assembly 374.

Objective lens assembly 374 focuses illuminating light beam 388 onto apoint 398 on wafer surface 400, thereby producing a bright-field lightbeam 388 and a gray-field light beam 390. Objective lens assembly 374collects and collimates light beams 388 and 390, and directs light beams388 and 390 toward relay lens assembly 372.

Relay lens assembly 376 produces an inverted image of the entrance pupilof objective lens assembly 374 at the pupil annular mirror 370. Annularmirror 370 reflects gray-field light beam 390 toward gray-field detector380. Gray-field detector 380 receives gray-field light beam 390 anddetects properties thereof.

Bright-field light beam 388 passes through the aperture of annularmirror 370 and from there, further through quarter wave plate 368,towards polarizing beam splitter 366. Semi-transparent reflection plane402 reflects bright-field light beam 388 toward bright-field detector378. Bright-field detector 378 receives bright-field light beam 388 anddetects properties thereof.

Polarizing beam splitter 366 and quarter wave plate 368 are used insystem 360 for reflecting bright-field light beam 388, and not forreflecting gray-field light beam 390. Thus, a smaller polarizing beamsplitter and a smaller quarter wave plate can be used in system 360,since the required sizes of polarizing beam splitter 366 and quarterwave plate 368 are determined by the bright-field diameter and scanningangle, and not by the gray-field diameter. It is noted that the use of asmaller polarizing beam splitter and a smaller quarter wave platesignificantly reduces the manufacturing cost of system 360, since thecost and size of the polarizing beam splitter are highly correlatedthere between.

According to another aspect of the disclosed technique, apodizators arepositioned in the illumination path (and not in the collection path),thereby controlling the shape of the illumination light beams, withoutdirectly affecting the shape of the respective collected bright-fieldand gray-field light beams. It is noted that the shape of the collectedlight beams may be indirectly affected by the apodizators, since thecollected light beams depend on the respective illuminated light beams.According to this aspect, the illuminating light beam first passesthrough an apodizator located at a first pupil. The apodizator shapesthe illuminating light beam at a predetermined shape. The illuminatinglight beam then passes through a relay lens assembly, which produces animage of the first pupil at the entrance pupil of the objective lens.

Reference is now made to FIG. 6, which is a schematic illustration of ascanning system, generally referenced 420, constructed and operative inaccordance with another embodiment of the disclosed technique.

In the example set forth in FIG. 6, system 420 is used for scanning awafer surface 422. System 420 includes a laser light source 424, ascanner 426, an apodizator 428, a polarizing beam splitter 430, aquarter wave plate 434, an objective lens assembly 436, relay lensassemblies 440 and 442, an annular mirror 444, a bright-field detector446 and a gray-field detector 448. Objective lens assembly 436 includesan objective entrance pupil 438 and an objective lens 466. Polarizingbeam splitter 430 includes a semi-transparent reflection plane 432.Laser light source 424, scanner 426, apodizator 428, relay lens assembly440, polarizing beam splitter 430, quarter wave plate 434, objectivelens assembly 436 and wafer surface 422 are positioned along a firstoptical axis 460. First optical axis 460 is perpendicular to wafersurface 422. Scanner 426 is positioned between laser light source 424and apodizator 428. Relay lens assembly 440 is positioned betweenapodizator 428 and polarizing beam splitter 430. Quarter wave plate 434is positioned between polarizing beam splitter 432 and objective lensassembly 436. Objective lens assembly 436 is positioned between quarterwave plate 434 and wafer surface 422.

Polarizing beam splitter 430, relay lens assembly 442, annular mirror444 and bright-field detector 446 are positioned along a second opticalaxis 462. In the present example, second optical axis 462 isperpendicular to first optical axis 460. Relay lens assembly 442 ispositioned between polarizing beam splitter 430 and annular mirror 444.Annular mirror 444 is positioned between relay lens assembly 442 andbright-field detector 446.

Annular mirror 444 and gray-field detector 448 are positioned along athird optical axis 464. In the present example, third optical axis 464is parallel to first optical axis 460.

Laser light source 424, scanner 426, polarizing beam splitter 430,semi-transparent reflection plane 432, quarter wave plate 434, annularmirror 444, objective lens assembly 436, objective entrance pupil 438,bright-field detector 446 and gray-field detector 448 are generallysimilar to laser light source 204, scanner 206, polarizing beam splitter210, semi-transparent reflection plane 212, quarter wave plate 214,annular mirror 232, objective lens assembly 222, objective aperture stop224, bright-field detector 234 and gray-field detector 236 (FIG. 3),respectively. Relay lens assemblies 440 and 442 are generally similar torelay lens 230 (FIG. 3).

In general, apodizator 428 has a minimal diameter of at least D.sub.IL.In the present example, apodizator 428 is circular and has a diameter ofD.sub.IL. A first portion of the area of apodizator 428 is transparent,while a second portion is opaque. For example, apodizator 428 mayinclude a transmitting outer annular region and an opaque inner circularregion. Thus, apodizator 428 shapes light beams incident there upon.

Annular mirror 444 is located at a pupil of the scanning system. In thepresent example, annular mirror 444 is oriented at 45 degrees relativeto axes 462 and 464. Semi-transparent reflection plane 432 is orientedat 45 degrees relative to optical axes 460 and 462.

Laser light source 424 emits a laser light beam 450 toward scanner 426.Scanner 426 receives laser light beam 450 and emits an illuminatinglight beam 452, at diameter D.sub.IL, toward apodizator 428.

Apodizator 428 shapes illuminating light beam 452.sub.1 at apredetermined light beam shape.

Illuminating light beam 452 then reaches relay lens assembly 440. Relaylens assembly 440 produces an inverted image of the pupil of apodizator428, at the entrance pupil of objective lens assembly 436. Illuminatinglight beam 452 proceeds from relay lens assembly 440 to polarizing beamsplitter 430. Illuminating light beam 452 passes through polarizing beamsplitter and from there, further through quarter wave plate 434 towardobjective lens assembly 436. Objective lens assembly 436 focusesilluminating light beam 452 onto a point 458 on wafer surface 400,thereby producing a bright-field light beam 454 and a gray-field lightbeam 456. Objective lens assembly 436 collects light beams 454 and 456,and directs them towards quarter wave plate 434. Light beams 454 and 456pass through quarter wave plate 434 and are reflected fromsemi-transparent reflection plane 432, toward relay lens assembly 442.Relay lens assembly 442 produces an inverted image of the entrance pupilof objective lens assembly 436, at the pupil of annular mirror 444.Bright-field light beam 454 passes through the aperture of annularmirror 444 and is detected at bright-field detector 446. Gray-fieldlight beam 456 is reflected by annular mirror 464 and is detected atgray-field detector 448.

System 420 may further include more apodizators (not shown) in additionto apodizator 428. Each apodizator has different transmitting portionswith different shapes or dimensions, and hence, each apodizatordetermines a different shape for the illuminating light beam. Theapodizators are mounted on a turret, a slide (both not shown), and thelike, which enables interchanging apodizators. Thus, system 420 canoperate at different modes of operation, wherein each mode of operationis characterized by different light beam shape, depending on theselected apodizator.

Reference is further made to FIGS. 7A, 7B and 7C. FIG. 7A is a schematicillustration of an apodizator 480, constructed and operative inaccordance with a further embodiment of the disclosed technique. FIG. 7Bis a schematic illustration of objective lens assembly 436 of system420, scanned wafer surface 422 (FIG. 6), and an illuminating light beam490, which has already passed though apodizator 480 (FIG. 7A). FIG. 7Cis a schematic illustration of a bright-field light beam 500 and agray-field light beam 502, which are reflections and refractions ofilluminating light beam 490 (FIG. 7B), by wafer surface 422, travelingfrom wafer surface 422 and passing through objective lens assembly 436(FIG. 6).

With reference to FIG. 7A, apodizator 480 is a circular, transparentfilter. Apodizator 480 has diameter D.sub.IL. Apodizator 480 is uniform(i.e., fully transparent or filtering at specific wavelengths, and thelike) and as such affects illuminating light beam 490 in a uniformspatial manner.

With reference to FIG. 7B, objective lens assembly 436 includes anobjective lens 466. Illuminating light beam 490 illuminates a point 492on wafer surface 422, after passing through apodizator 480 (FIG. 7A).

With reference to FIG. 7C, wafer surface 422 scatters and reflects lightfrom point 492, thereby producing a bright-field light beam 500 and agray-field light beam 502. Light beams 500 and 502 are eventuallydetected at bright-field detector 446 and gray-field detector 448 (FIG.6), respectively.

Reference is further made to FIGS. 8A, 8B and 8C. FIG. 8A is a schematicillustration of another apodizator 520, constructed and operative inaccordance with another embodiment of the disclosed technique. FIG. 8Bis a schematic illustration of objective lens assembly 436 of system420, scanned wafer surface 422 (FIG. 6), and an illuminating light beam530, which has already passed through apodizator 520 (FIG. 8A). FIG. 8Cis a schematic illustration of a bright-field light beam 540 and agray-field light beam 542, which are reflections and refractions ofilluminating light beam 530 (FIG. 8B), by wafer surface 422, travelingfrom wafer surface 422 and passing through objective lens assembly 436(FIG. 6).

With reference to FIG. 8A, apodizator 520 is a circular filter havingdiameter D.sub.IL. Apodizator 520 includes an outer region 522 and aninner region 524. Outer region 522 is opaque and annular, limited byouter diameter D.sub.IL and an inner diameter D.sub.1, whereinD.sub.1<D.sub.IL. Inner region 524 is transparent and circular, havingdiameter D.sub.1.

With reference to FIG. 8B, illuminating light beam 530 illuminates point492 on wafer surface 422, after passing through apodizator 520 (FIG.8A). Illuminating light beam 530 has diameter D.sub.1. A volume 532(shaded) around illuminating light beam 530, would have been a part ofilluminating light beam 532, had it not been blocked by outer region 522of apodizator 520 (FIG. 8A). The cross-section of volume 532 is annular,limited between inner diameter D.sub.1 and outer diameter D.sub.IL. Itis noted that the diameters of light beam 530 and volume 532, and someof the other light beams in the description that follows, refer to thediameter when the light beam is collimated.

With reference to FIG. 8C, wafer surface 422 scatters and reflectsilluminating light beam 530 (FIG. 8B), thereby producing a bright-fieldlight beam 540 and a gray-field light beam 542. Light beams 540 and 542are eventually detected at bright-field detector 446 and gray-fielddetector 448 (FIG. 6), respectively.

Reference is further made to FIGS. 9A, 9B and 9C. FIG. 9A is a schematicillustration of another apodizator 560, constructed and operative inaccordance with a further embodiment of the disclosed technique. FIG. 9Bis a schematic illustration of objective lens assembly 436 of system420, scanned wafer surface 422 (FIG. 6), and an illuminating light beam570, which has already passed through apodizator 560 (FIG. 9A). FIG. 9Cis a schematic illustration of a bright-field light beam 580 and agray-field light beam 582, which are reflections and refractions ofilluminating light beam 570 (FIG. 9B), by wafer surface 422, travelingfrom wafer surface 422 and passing through objective lens assembly 436.

With reference to FIG. 9A, apodizator 560 is a circular filter havingdiameter D.sub.IL. Apodizator 560 includes an outer region 562 and aninner region 564. Outer region 562 is transparent and annular, limitedbetween outer diameter D.sub.ILand inner diameter D.sub.1. Inner region564 is opaque and circular, having diameter D.sub.1.

With reference to FIG. 9B, illuminating light beam 570 illuminates point492 on wafer surface 422. The cross-section of illuminating light beam570 is annular, limited between outer diameter D.sub.IL and innerdiameter D.sub.1. Illuminating light beam 570 surrounds a volume 572(shaded). Volume 572 has diameter D.sub.1. Volume 572 would have been apart of illuminating light beam 570 had it not been blocked by innerregion 564 of apodizator 560 (FIG. 9A). With reference to FIG. 9C, wafersurface 422 scatters and reflects illuminating light beam 570 (FIG. 9B),thereby producing bright-field light beam 580 and a gray-field lightbeam 582.

Reference is further made to FIGS. 10A, 10B and 10C. FIG. 10A is aschematic illustration of another apodizator 600, constructed andoperative in accordance with another embodiment of the disclosedtechnique. FIG. 10B is a schematic illustration of objective lensassembly 436 of system 420, scanned wafer surface 422 (FIG. 6), and anilluminating light beam 610, which has already passed through apodizator600 (FIG. 10A). FIG. 10C is a schematic illustration of a bright-fieldlight beam 620 and a gray-field light beam 622, which are reflectionsand refractions of illuminating light beam 610 (FIG. 10B), by wafersurface 422, traveling from wafer surface 422 and passing throughobjective lens assembly 436.

With reference to FIG. 10A, apodizator 600 is a circular filter havingdiameter D.sub.IL. Apodizator 600 includes an outer region 602, anintermediate region 604 and an inner region 606. Outer region 602 istransparent and annular, limited between outer diameter D.sub.IL andinner diameter D.sub.1. Intermediate region 604 is opaque and annular,limited between outer diameter D.sub.1 and an inner diameter D.sub.2,wherein D.sub.2<D.sub.1<D.sub.IL. Inner region 606 is transparent andcircular, having diameter D.sub.2.

With reference to FIG. 10B, illuminating light beam 610 illuminatespoint 492 on wafer surface 422. Illuminating light beam 610 has diameterD.sub.IL. Illuminating light beam 610 includes an outer portion 612 andan inner portion 616. The cross-section of outer portion 612 is annular,limited between outer diameter D.sub.IL and inner diameter D.sub.1. Thecross-section of inner portion 616 is circular, having diameter D.sub.2.A volume 614 surrounds inner portion 616. Outer portion 616 surroundsvolume 614. The cross-section of volume 614 is annular, limited betweenouter diameter D.sub.1 and inner diameter D.sub.2. Volume 614 would havebeen a part of illuminating light beam 610, had it not been blocked byinner region 606 of apodizator 600 (FIG. 10A).

With reference to FIG. 10C, wafer surface 422 scatters and reflectsilluminating light beam 610 (FIG. 10B), thereby producing a bright-fieldlight beam 620 and a gray-field light beam 622. Reference is now made toFIGS. 11A, 11B and 11C. FIG. 11A is a schematic illustration of anotherapodizator, generally referenced 640, constructed and operative inaccordance with a further embodiment of the disclosed technique. FIG.11B is a schematic illustration of objective lens assembly 436 of system420, scanned wafer surface 422 (FIG. 6), and an illuminating light beam650, which has already passed through apodizator 640 (FIG. 11A). FIG.11C is a schematic illustration of a bright-field light beam 660 and agray-field light beam 662, which are reflections and refractions ofilluminating light beam 650 (FIG. 11B), by wafer surface 422, travelingfrom wafer surface 422 and passing through objective lens assembly 436.

With reference to FIG. 11A, apodizator 640 is a circular filter havingdiameter D.sub.IL. Filter 640 includes a left region 642 and a rightregion 644. Left region 642 is opaque. Right region 644 is transparent.

With reference to FIG. 1B, illuminating light beam 650 illuminates point492 on wafer surface 422. A volume 652, would have been a part ofilluminating light beam 650 had it not been blocked by right region 644of apodizator 640 (FIG. 11A).

With reference to FIG. 11C, wafer surface 422 scatters and reflectsilluminating light beam 650 (FIG. 11B), thereby producing a bright-fieldlight beam 660 and a gray-field light beam 662. It is noted that lightbeams 500 and 502 (FIG. 7C), 540 and 542 (FIG. 8C), 580 and 582 (FIG.9C), 620 and 622 (FIG. 10C), and 660 and 662 (FIG. 11C), all have thesame diameters. However, these light beams generally differ in otherproperties, since their respective illuminating light beams aregenerally different.

Reference is now made to FIG. 12, which is a schematic illustration of adynamic apodizator 680 and a controller 690, constructed and operativein accordance with a further embodiment of the disclosed technique.

Dynamic apodizator 680 is coupled to controller 690. It is noted thatcontroller 690 may be further coupled with other elements of thescanning system, a user interface, a combination thereof, and the like.Dynamic apodizator 680 includes a plurality of light valve elements,generally referenced 682.sub.i, such as light valve elements 682.sub.1,682.sub.2, and 682.sub.N, arranged in a two-dimensional array.

Light valve elements are components, which have an ability to influencelight in at least one way. Some of these ways are, for example:scattering, converging, diverging, absorbing, imposing a polarizationpattern, influencing a polarization pattern which, for example, may beby rotation of a polarization plane, influencing wave length, divertinga beam's direction for example by using digital micro-mirror display(also known as DMD) or by using field effect, influencing phase,interference techniques, which either blocks or transfers a portion ofbeam of light and the like. Activation of light valve elements, whichare utilized by the disclosed technique, can be performed eitherelectrically, magnetically or optically. Commonly used light valveelements are liquid crystal based elements, which either rotate orcreate and enforce a predetermined polarization axis. In the example setforth in FIG. 12, light valve elements 680.sub.i have two states,transmitting and non-transmitting. A light valve in the transmittingstate, transmits light there through, and hence, light incident thereupon reaches bright-field detector 446 (FIG. 6). A light valve in thenon-transmitting state prevents light from reaching bright-fielddetector 446.

Depending on a signal from controller 690 to dynamic apodizator 680,each of light valves 680.sub.i is either transparent or opaque. In thepresent example, light valve elements 682.sub.1 and 682.sub.N aretransparent, and cell 682.sub.2 is opaque.

According to another aspect of the disclosed technique, system 420 (FIG.6) is complemented by bright-field filters, which block a selectedportion of the bright-field light beam before the bright-field lightbeam reaches the bright-field detector.

Reference is now made to FIGS. 13A, 13B and 13C. FIG. 13A is a schematicillustration of a bright-field filter 700. FIG. 13B is a schematicillustration of bright-field filter 700 (FIG. 13A) and a bright-fieldlight beam 720 incident there upon and partially transmitted therethrough. FIG. 13C is a schematic illustration of objective lens assembly436 of system 420 and scanned wafer surface 422 (FIG. 6), illuminatinglight beam 570 and volume 572 (FIG. 9A), and bright-field light beam 720(FIG. 13B) and a gray-field light beam 742, which are reflections andrefractions of illuminating light beam 720, by wafer surface 422.

With reference to FIG. 13A, bright-field filter 700 is a circular filterhaving diameter D.sub.IL. Bright-field filter 700 includes an outerregion 702 and an inner region 704. Outer region 702 is opaque andannular, limited between outer diameter D.sub.ILand inner diameterD.sub.1. Inner region 704 is transparent and circular, having diameterD.sub.1.

With reference to FIG. 13B, bright-field light beam 720 reachesbright-field filter 700 at diameter D.sub.IL. Bright field light beam ispartially transmitted through bright-field filter 700 at diameterD.sub.1. A volume 722 (shaded) around bright-field light beam 720, wouldhave been a part of bright-field light beam 720 had it not been blockedby outer region 702 of bright-field filter 700 (FIG. 13A). Thecross-section of volume 722 is annular, limited between inner diameterD.sub.1 and outer diameter D.sub.IL.

With reference to FIG. 13C, objective lens assembly 436 focusesilluminating light beam 570 onto a point 492 on wafer surface 422. Wafersurface 422 scatters and reflects illuminating light beam 570, therebyproducing bright-field light beam 720 (FIG. 13B) and gray-field lightbeam 742. Volume 572 is a part of bright-field light beam 720. Asmentioned above, volume 572 would have been a part of illuminating lightbeam 570 had it not been blocked by inner region 564 of apodizator 560(FIG. 9A). The portion of bright-field light beam having the samegeometrical location as illuminating light beam 570, is eventuallyblocked by bright-field filter 700 (FIG. 13B).

Thus, with reference to the system of FIG. 13C, the light which wouldeventually reach the bright-field detector, does not coincide with theilluminating light beam. This situation is similar to dark-fieldmicroscopes. In a dark-field microscope, the inspected surface isilluminated from significantly flat angles (i.e., almost parallel to theinspected surface), and the reflected light is detected at nearly rightangles, above the inspected surface. The preceding situation is similarin that the angles at which the illuminating light hits the inspectedsurface and the angles at which detected light are reflected from theinspected surface, do not overlap.

In a further embodiment of the disclosed technique, continuous rangemagnification replaces the discrete values magnification which wasprovided by the interchangeable telescopes. A system according to thisembodiment utilizes optical elements with zoom capabilities, to replacethe multiple telescopes. Zoom capable optical element may include ateleconverter lens, a zoom capable telescope and the like. Such zoomcapable optical elements allow adjustment of magnification level in agiven range, without replacing the telescope. The present embodiment mayinclude a single zoom capable optical element or a plurality ofinterchangeable zoom capable optical elements.

Reference is now made to FIG. 14, which is a schematic illustration of asystem, generally referenced 750, for scanning a wafer surface,according to another embodiment of the disclosed technique. System 750includes an automatic feedback magnification architecture for suspecteddefect analysis. In the present example, system 750 is used for scanninga wafer surface 752.

System 750 includes an objective lens assembly 754, a telescope 756, acontroller 760, a teleconverter lens assembly 758 with zoomcapabilities, an analysis module 762, a sensor 764 and an optical path(not detailed) 766.

Two elements are considered optically associated there between when theyare positioned so as to allow light from one of the elements to enterthe other element (e.g., by being placed along the same optical axis).

Telescope 756 is optically associated with objective lens assembly 754and with teleconverter lens assembly 758. Teleconverter lens assembly758 is further optically associated via optical path 766 (not detailed)to sensor 764. Analysis module 762 is coupled to sensor 764 and tocontroller 760. Controller 760 is further coupled to teleconverter lensassembly 758. System 750 may further include an illuminating lightsource (not shown).

System 750 is designed to allow a suspected defect detected on wafer 752to be examined in increasingly greater levels of magnification, by usinga continuous magnification level range. A continuous magnification rangeis achieved by optically associating teleconverter lens assembly 758having zoom capabilities, with telescope 756. Teleconverter lensassembly 758 and telescope 756 both define a combined magnificationrange. Changing the optical setting of teleconverter lens assembly 758effectively changes the focal length of telescope 756, thereby changingthe combined magnification level, within the combined magnificationrange. Teleconverter lens assembly 758 further changes the angular widthof illuminating light beams transmitted through teleconverter lensassembly 758 and telescope 756, thereby allowing control over scanningresolution of the inspected wafer surface.

Light from illuminating light source (not shown in Figure) is incidenton wafer 752, either by oblique illumination, or by direct illuminationvia teleconverter lens assembly 758, telescope 756, and objective lensassembly 754. The angular width of the oblique illuminating light is setby optical elements in the oblique illuminating beam path (not shown inFigure). The angular width of direct illuminating beam can be modifiedby employing the zoom capabilities of teleconverter lens assembly 758.

Objective lens assembly 754 collects light reflected and scattered fromwafer surface 752. Objective lens assembly 754 directs light to sensor764 via telescope 756 and teleconverter lens assembly 758 and furthervia optical path 766 (not detailed in Figure). Sensor 764 detects lightreceived from teleconverter lens assembly 758 and provides datarespective of the detected light to analysis module 762. Analysis module762 analyzes the received data and determines whether a suspected defectis classified as an actual defect, is classified as a detection error(no defect), or requires further analysis.

If the suspected defect is classified as an actual defect, analysismodule 762 reports the detected defect and resumes scanning for furtherdefects. If the suspected defect is determined to be a detection error,normal scanning is resumed. If the suspected defect is determined torequire further analysis, then analysis module 762 determines therequired magnification level, and provides a command to controller 760,to operate teleconverter lens assembly 758. Controller 760 operatesteleconverter lens assembly 758 so as to adjust the magnification to thelevel determined by analysis module 762. System 750 then scans suspecteddefect area and repeats the process outlined using increasingly highermagnification levels, until suspected defect is classified.

Reference is now made to FIG. 15, which is a schematic illustration of asystem, generally referenced 780, for scanning a wafer surface,according to a further embodiment of the disclosed technique. System 780includes an automatic feedback magnification architecture for suspecteddefect analysis. In the present example, system 780 is used for scanninga wafer surface 782.

System 780 includes an objective lens assembly 784, a telescope 786, ateleconverter lens assembly 788 with zoom capabilities, a controller790, an analysis module 792, a sensor 794 and an optical path (notdetailed) 796.

Teleconverter lens assembly 788 is optically associated with objectivelens assembly 784 and with telescope 786. Telescope 786 is furtheroptically associated via optical path 796 (not detailed) to sensor 794.Analysis module 792 is coupled to sensor 794 and to controller 790,controller 790 is further coupled to teleconverter lens assembly 788.System 780 may further include an illuminating light source (not shown).

System 780 differs from system 750 (FIG. 14) in that the teleconverterlens is located between the telescope and the objective lens assembly(i.e., and not after the telescope and objective lens assembly).

Reference is now made to FIG. 16, which is a schematic illustration of afront end optical assembly, generally referenced 800, for scanning awafer surface, according to another embodiment of the disclosedtechnique. Front end optical assembly 800 may be incorporated in ascanning system with image analysis and automatic feedback for suspecteddefect analysis. In the present example, front end optical assembly 800is used for scanning a wafer surface 802.

Front end optical assembly 800 includes an objective lens assembly 804and a telescope 806 with zoom capabilities (also called zoom telescope).Telescope 806 may be further coupled to a controller (not shown), whichcontrols the magnification thereof. Objective lens assembly 804 isoptically associated with telescope 806. Telescope 806 is furtheroptically associated via an optical path to a sensor (not shown). Frontend optical assembly 800 is designed to allow a suspected defectdetected on wafer 802 to be examined at increasingly greater levels ofmagnification, by using a continuous magnification range.

A continuous magnification range is achieved by utilizing a telescope806, having zoom capabilities within a magnification range. Changing thezoom level setting for telescope 806, changes the magnification level,within the magnification range. Telescope 806 further changes thenumerical aperture of the illuminating light beam, thereby allowingcontrol over the scanning resolution of the inspected surface.

Light from an illuminating light source (not shown) is incident on wafer802, either by oblique illumination, or by direct illumination viatelescope 806 and objective lens assembly 804. The numerical aperture ofoblique illuminating light is set by optical elements in obliqueilluminating beam path (not shown). The numerical aperture of directilluminating light beams can be modified by employing the zoomcapabilities of telescope 806.

Front end optical assembly 800 differs from systems 750 and is 800, inthat the zoom capable optical element is the telescope 806 (i.e., not ateleconverter lens). Other aspects of front end assembly 800 (e.g.,automatic magnification change) are similar to those detailed for system750.

Systems 750 and 780 (FIGS. 14 and 15), and front end assembly 800 (FIG.16) reduce the need for replacing the telescope when magnification andscanning resolution changes are required, and further eliminate (orsignificantly reduce) the need for operator intervention.

Reference is now made to FIG. 17, which is a schematic illustration of amethod for operating either of systems 750, 780 and front end assembly800 of FIGS. 14, 15 and 16, respectively, operative in accordance withanother embodiment of the disclosed technique.

In procedure 850, the wafer surface is scanned for suspected defects, bydetecting an image of a portion of the wafer surface. In the example setforth in FIG. 14, the wafer surface 752 is scanned by illuminating lightbeams, and collected light is transmitted to sensor 764 via the opticalpath.

In procedure 852, the presence of defects is detected, by analyzing thedetected image. In the example set forth in FIG. 14, analysis module 762analyzes data provided from sensor 764, to determine areas of suspecteddefects.

If the presence of defects is not detected, then the system resumesnormal processing (procedure 858). Otherwise, if the presence of adefect is detected, then this defect is marked and reported (procedure860). Finally, if the detection of the presence of defects isinconclusive, then the system proceeds to procedure 854.

In procedure 854, a zoom level which is required for further analysis,is calculated. In the example set forth in FIG. 14, analysis module 762,calculates a zoom level which is required for further analysis.

In procedure 856, the zoom level is adjusted to the level calculated inprocedure 854. In the example set forth in FIG. 14, analysis module 762provides a command to controller 760 to operate teleconverter lensassembly 758. Controller 760 then operates teleconverter lens assembly758 to change the magnification level to that calculated by analysismodule 762. After the zoom level is adjusted in procedure 856, thesystem proceeds to procedure 850 to perform further analysis ofsuspected defect areas. In the example set forth in FIG. 14, thesuspected area is scanned again using a higher magnification level. Theprocess illustrated is repeated until the suspected defect is classifiedas an actual defect or a false detection.

According to another aspect of the disclosed technique, there isprovided a novel structure of the gray-field detector. The novelgray-field detector is divided into a plurality of zones. Each zone isdetected independently, and thus, the combined results providesupplementary information about the inspected wafer surface.

Reference is now made to FIG. 18, which is a schematic illustration of amulti-zone gray-field detector, generally referenced 900, constructedand operative in accordance with a further embodiment of the disclosedtechnique. Multi-zone gray-field detector 900 includes a gray-fieldcollector 902, light guides 910.sub.1, 910.sub.2, 910.sub.3, 910.sub.4,910.sub.5 and 910.sub.6, and light detectors 904.sub.1, 904.sub.2,904.sub.3, 904.sub.4, 904.sub.5 and 904.sub.6.

Gray-field pupil collector 902 is circular at a diameter D.sub.GF.Gray-field collector 902 is located at a pupil of the scanning system.It is noted that diameter D.sub.GF may be set at any size, depending onthe size of the image, which is produced at the pupil of gray-fieldcollector 902. Gray-field collector 902 includes a right section906.sub.R, a left section 906.sub.L, a top section 906.sub.T, a bottomsection 906.sub.B, a top-right section 906.sub.TR, a bottom-rightsection 906.sub.BR, a top-left section 906.sub.TL, a bottom-left section906.sub.BL and a central section 906.sub.C. Central section 906.sub.C ispositioned at the center of light collector D.sub.GF. Central section906.sub.C is a square of side S.

Right section 906.sub.R is a horizontal strip of width S. The leftboundary of right section 906.sub.R is a straight line coinciding withthe right boundary of central section 906.sub.C. The top boundary ofright section 906.sub.R is a straight line extending the top boundary ofcentral section 906.sub.C. The bottom boundary of right section906.sub.R is a straight line extending the bottom boundary of centralsection 906.sub.C. The right boundary of right section 906.sub.R is anarc coinciding with a portion of the boundary of gray-field collector902. Left section 906.sub.L and right section 906.sub.R are symmetricalwith respect to the vertical diameter of gray-field collector 902. Topsection 906.sub.T and bottom section 906.sub.B are identical to rightsection 906.sub.R and left section 906.sub.L, but rotated by 90 degreesthere from. Top-right section 906.sub.TR has a left boundary coincidingwith the right boundary of top section 906.sub.T, a bottom boundarycoinciding with the top boundary of right section 906.sub.R, and atop-right boundary coinciding with a portion of the boundary ofgray-field collector 902. Similarly, bottom-right section 906.sub.BR,top-left section 906.sub.TL and bottom-left section 906.sub.BL completethe circular region occupied by gray-field collector 902.

Each section of gray-field collector 902, except for central section906.sub.C, is optically coupled to a respective light detector in amanner that the light incident upon that section, is directed to thatrespective light detector. It is noted that more than one section can beoptically coupled to the same light detector. Different light guidingelements can be used for optically coupling the sections to theirrespective light detectors, such as optic fiber, specific shape moldedtransparent light guides, mirrors, and the like. In the example setforth in FIG. 18, each of light guides 910.sub.1, 910.sub.2, 910.sub.3,910.sub.4, 910.sub.5 and 910.sub.6, includes a plurality of opticalfibers.

Light guide 910.sub.1 optically couples top-left section 906.sub.TL tolight detector 904.sub.1. Light guide 910.sub.2 optically couplestop-right section 906.sub.TR to light detector 904.sub.2. Light guide910.sub.3 optically couples left section 906.sub.L and right section906.sub.R to light detector 904.sub.3. Light guide 910.sub.4 opticallycouples bottom-left section 906.sub.BL to light detector 904.sub.4.Light guide 910.sub.5 optically couples left section 906.sub.L and rightsection 906.sub.R to light detector 904.sub.5. Light guide 910.sub.6optically couples bottom section 906.sub.L and top section 906.sub.T tolight detector 904.sub.6.

It is noted that gray-field detector 900 may include additional opticalelements, such as a relay lens assembly, which is located in front ofthe gray-field pupil. Such a relay lens assembly, produces thegray-field portion of the image of a pupil of the scanning system, atgray-field collector 902.

It is further noted that, unlike conventional gray-field detectors whichprovide information respective of the amount of gray-field light, lightdetectors 904.sub.1, 904.sub.2, 904.sub.3, 904.sub.4, 904.sub.5 and904.sub.6 provide information respective of angular and spatialdistribution of the gray-field light. The information provided by lightdetectors 904.sub.1, 904.sub.2, 904.sub.3, 904.sub.4, 904.sub.5 and904.sub.6, significantly increases the amount and quality of inspectioninformation, and hence ability to detect defects in the scanned surface.

Several aspects of the disclosed technique, which are illustrated in thedrawings discussed hereinabove, may be combined in a single system.Reference is now made to FIG. 19, which is a schematic illustration of asystem, generally referenced 1000, for scanning a wafer surface,constructed and operative in accordance with another embodiment of thedisclosed technique. In the example set forth in FIG. 19, system 1000 isused for scanning a surface 1002. It is noted that system 1000 is notdrawn to scale. System 1000 includes a laser light source 1004, ascanner 1006, an apodizator 1008, a relay lens assembly 1010, apolarizing beam splitter 1012, a quarter wave plate 1014, an annularmirror 1016, an aperture stop 1036, a telescope 1018, an objective lensassembly 1020, a bright-field filter 1026, a bright-field detector 1022and a gray-field detector 1024.

Laser light source 1004, scanner 1006, aperture stop 1036, telescope1018 and objective lens 1020 are generally similar to laser light source204, scanner 206, aperture stop 218, telescope 216 and objective lensassembly 222 (FIG. 3), respectively. Objective lens assembly 1020 has ahigh numerical aperture. System 1000 includes additional telescopes (notshown) which are interchangeable with telescope 1020.

Polarizing beam splitter 1012, quarter wave plate 1014, annular mirror1016 and bright-field detector 1022 are generally similar to polarizingbeam splitter 366, quarter wave plate 368, annular mirror 370 andbright-field detector 378 (FIG. 5), respectively. Gray-field detector1024 is generally similar to multi-zone gray-field detector 900 (FIG.18).

Apodizator 1008 and relay lens assembly 1010 are generally similar toapodizator 428 and relay lens assembly 440 (FIG. 6), respectively.Bright-field filter 1026 is generally similar to bright-field filter 700(FIG. 13B). System 1000 may further include additional apodizators (notshown) which are interchangeable with apodizator 1008.

Laser light source 1004, scanner 1006, apodizator 1008, relay lensassembly 1010, polarizing beam splitter 1012, quarter wave plate 1014,annular mirror 1016, telescope 1018, objective lens assembly 1020 andwafer surface 1012 are positioned along a first optical axis 1030. Firstoptical axis 1030 is perpendicular to surface 1002.

Scanner 1006 is positioned between laser light source 1004 andapodizator 1008. Relay lens assembly 1010 is positioned betweenapodizator 1008 and polarizing beam splitter 1012. Quarter wave plate1014 is positioned between polarizing beam splitter 1012 and annularmirror 1016. Aperture stop 1036 is positioned between annular mirror1016 and telescope 1018. Objective lens assembly 1020 is positionedbetween telescope 1018 and surface 1002.

Polarizing beam splitter 1012, bright-field filter 1026 and bright-fielddetector 1022 are positioned along a second optical axis 1032.Bright-field filter 1026 is positioned between polarizing beam splitter1012 and bright-field detector 1022. In the present example, secondoptical axis 1032 is perpendicular to first optical axis 1030.

Annular mirror 1016 and gray-field detector 1024 are positioned along athird optical axis 1034. In the present example, third optical axis 1034is parallel to second optical axis 1032. It is noted that the arrows onoptical axes 1030, 1032 and 1034, merely indicate the general directionsof light beam progression there along and not the light beamsthemselves, which are not shown. Polarizing beam splitter 1012 includesa semi-transparent reflection plane 1026. In the present example,semi-transparent reflection plane 1026 is oriented at 45 degreesrelative to optical axes 1030 and 1032. Annular mirror 1016 is alsooriented at 45 degrees relative to optical axes 1030 and 1032.

Laser 1004 emits a laser light beam (not shown) toward scanner 1006.Scanner 1006 receives the laser light beam and produces an illuminatinglight beam (not shown). The illuminating beam passes successivelythrough scanner 1006, apodizator 1008, relay lens assembly 1010,polarizing beam splitter 1012, quarter wave plate 1014, annular mirror1016, aperture stop 1036, telescope 1018, and finally objective lensassembly 1020. The illuminating light beam then reaches surface 1002.Surface 1002 reflects the illuminating light beam, thereby producing abright-field light beam and a gray-field light beam (both not shown).The combined bright-field and gray-field light beam passes throughobjective lens assembly 1020, aperture stop 1036 and telescope 1018.Annular mirror 1016 reflects the gray-field light beam toward gray-fielddetector 1024, which detects the intensity thereof. The bright-fieldlight beam passes through the aperture of annular mirror 1016, andfurther through quarter wave plate 1014. Semi-transparent reflectionplane 1026 reflects the bright-field light beam towards bright-fielddetector 1022, which detects the intensity thereof.

It is noted that the combination of the single, high numerical apertureobjective lens assembly 1020, the annular mirror 1016 and the polarizingbeam splitter 1012, significantly increases the gray-field numericalaperture at an efficient cost, thereby significantly increasing theamount of data which is accumulated in the scanning process. This is dueto the fact that the novel optical structure of the annular mirror 1016and polarizing beam splitter 1012, does not limit the numerical apertureof the gray-field light beam which is transferred thereby toward thegray-field detector. As a result, the maximal numerical aperture of thisgray-field image mostly depends on the numerical aperture of theobjective lens assembly 1020.

It is further noted that the combination of apodizator 1008 andbright-field filters 1026, enables a mode of operation similar to thatof a dark-field microscope, in that the illuminating light is incidenton the wafer surface at angles which are not detected by thebright-field detector. Combined with telescope 1018, the combination ofapodizator 1008 and bright-field filters 1026, further enhances thesimilarity to microscope dark-field mode. It is noted that sometelescopes are designed so as to increase the numerical aperture of theilluminating light beam and the bright-field light beam. Thus, theilluminating light and the detected light still do not intersect, butthe surface is illuminated from angles which are further flattened,closer to the angles of illumination in dark-field microscopes.

It is still further noted that system 1000 is characterized by a highgray-field numerical aperture, which significantly increases theinformation which is embedded in the gray-field light beam. Thisinformation is detected at great detail by gray-field detector 1024.

Reference is now made to FIG. 20, which is a schematic illustration of amethod for inspecting a surface, in accordance with another embodimentof the disclosed technique. In procedure 1100, an illuminating lightbeam is directed through an apodizator and a relay lens assembly. In theexample set forth in FIG. 19, laser 1004 and scanner 1006 produce theilluminating light beam (not shown), which is directed throughapodizator 1008 and relay lens assembly 1010.

In procedure 1102, the illuminating light beam is directed through apolarizing beam splitter, a quarter wave plate and an annular mirror. Inthe example set forth in FIG. 1004, the illuminating light beam isdirected through polarizing beam splitter 1012 and quarter wave plate1014.

In procedure 1104, the illuminating light beam is directed through aselected telescope and an objective lens assembly, thereby focusing theilluminating light beam onto a point on the inspected surface. In theexample set forth in FIG. 19, the illuminating light beam is directedthrough telescope 1018 and objective lens assembly 1020, whereby theilluminating light beam is focused onto a point on inspected surface1002.

In procedure 1106, a portion of the reflected or scattered light iscollected at the objective lens assembly, and the collected light isdirected back through the telescope. In the example set forth in FIG.19, the illuminating light beam reflected and scattered from surface1002, and a portion of the scattered and reflected light is directedback through objective lens assembly 1020 and telescope 1018.

In procedure 1108, gray-field light beam is reflected by an annularmirror, towards a light detector. In the example set forth in FIG. 19,annular mirror 1016 reflects the gray-field light beam towardsgray-field detector 1024.

In procedure 1110, a bright-field light beam is directed through theaperture of the annular mirror and the quarter wave plate. In theexample set forth in FIG. 19, the bright-field light beam passes throughthe aperture of annular mirror 1016, and further through quarter waveplate 1014.

In procedure 1112, the bright-field light beam is reflected, at thepolarizing beam, towards a light detector. In the example set forth inFIG. 19, semi-transparent reflection plane 1026 reflects thebright-field light beam towards bright-field detector 1022. It is notedthat procedures 1108 and 1110 are performed independently and may begenerally executed in any order or concurrently.

It will be appreciated by persons skilled in the art that the disclosedtechnique is not limited to what has been particularly shown anddescribed hereinabove. Rather the scope of the disclosed technique isdefined only by the claims, which follow.

1. Multi-zone gray-field detector, comprising: a gray-field collector,having a variable diameter and being divided into a plurality ofsections, each of said sections defining a detection zone; a pluralityof light detectors; and a plurality of light guides, wherein eachrespective one of said plurality of light guides optically couples oneof said sections with one of said light detectors, each said lightdetector detecting at least a portion of light directed thereto, by arespective one of said light guides.
 2. The multi-zone gray-fielddetector according to claim 1, wherein at least one of said light guidescomprises an optic fiber.
 3. The multi-zone gray-field detectoraccording to claim 1, wherein at least one of said light guidescomprises a specific shape molded transparent light guide.
 4. Themulti-zone gray-field detector according to claim 1, wherein at leastone of said light guides comprises at least one mirror.
 5. Themulti-zone gray-field detector according to claim 1, wherein saidsections divide said gray-field collector horizontally and vertically.6. The multi-zone gray-field detector according to claim 1, wherein saidsections comprise: at least one horizontal section; at least onevertical section; at least one circular section, spread across an areaof said gray-field collector between a selected one of said at least onevertical section and a selected one of said at least one horizontalsection.
 7. The multi-zone gray-field detector according to claim 1,wherein said sections comprise: a right section; a left section; a topsection; a bottom section; a top-right section; a bottom-right section;a top-left section; a bottom-left section; and a central section.
 8. Themulti-zone gray-field detector according to claim 1, wherein at leastone of said light detectors is operative to detect light at at least onepredetermined wavelength.
 9. The multi-zone gray-field detectoraccording to claim 1, wherein at least one of said light detectors isfurther coupled with an analysis system.
 10. The multi-zone gray-fielddetector according to claim 1, further comprising a relay lens assembly,located in front of said gray-field collector.